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| MPSA94 High-Voltage PNP Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value -400 -400 -5.0 -200 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCE= -400 Vdc, IB =0) Collector Cutoff Current (VCB= -400 Vdc, IE=0) Emitter Cutoff Current (VEB= -4.0Vd c, IC =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO Min -400 -400 -5.0 Max -5.0 -0.1 -0.1 Unit Vdc Vdc Vdc uAdc uAdc uAdc WEITRON http://www.weitron.com.tw MPSA94 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= -1.0 mAdc, VCE=-10Vdc) (IC= -10 mAdc, VCE= -10Vdc) (IC= -100 mAdc, VCE= -10Vdc) Collector-Emitter Saturation Voltage (IC= -10 mAdc, IB= -1.0 mAdc) (IC= -50 mAdc, IB= -5.0 mAdc) Base-Emitter Saturation Voltage (IC= -10 mAdc, IB= -1.0 mAdc) Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= -20 Vdc, f=30MHz) VBE(sat) VCE(sat) - HFE(1) HFE(2) HFE(3) 70 80 60 300 - - -0.2 -0.3 Vdc - -0.75 Vdc fT 50 - MHz WEITRON http://www.weitron.com.tw 2N5401 MPSA94 FIG1. FIG2. FIG3. WEITRON WEITRON http://www.weitron.com.tw http://www.weitron.com.tw MPSA94 TO-92 Outline Dimensions E unit:mm TO-92 H C J K G Dim A B C D E G H J K L Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A |
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